AFIT Faculty Directory
share this page with a friend
 
Lanzerotti, Mary Y. , Associate Professor of Computer Science
Dept of Electrical and Computer Engineering
 
 
Duty Phone: 937-255-3636 Ext: 4442
Email: Mary Lanzerotti
 
Education:

Ph.D. Cornell University, M.S. Cornell University.

M. Phil. University of Cambridge, UK.

A.B. Harvard University.

 
Research Interests:

VLSI Design.

 

 
Expertise:
ANALYTICAL AND STATISTICAL TECHNIQUES FOR VLSI CIRCUIT DESIGN.
DESIGN OF EFFICIENT ON-CHIP INTERCONNECTIONS THROUGH THE COOPERATIVE INTERACTIONS OF MANUAL INTERVENTION AND COMPUTER-AIDED DESIGN TOOLS.
 
Publications:

The Physical Design of the POWER6 Microprocessor

  • "The Physical Design of the POWER6 Microprocessor," Joshua Friedrich, Bradley McCredie, Norman James, Bill Huott, Brian Curran, Eric Fluhr, Gauray Mittal, Eddie Chan, Yuen Chan, Donald Plass, Sam Chu, Hung Le, Leo Clark, John Ripley, Scott Taylor, Jack DiLullo, Mary Lanzerotti, Proceedings of the International Solid-State Circuits Conference (ISSCC), San Francisco, CA, Feb. 11-15, 2007.


    Rent's rule for ultralarge-scale integrated circuitry and applications

  • "Impact of Interconnect Length Changes on Effective Materials Properties (Dielectric Constant)," M. Y. Lanzerotti, G. Fiorenza, R. A. Rand, Proceedings of the Workshop on System-Level Interconnect Prediction (SLIP), Austin, TX, March 17-18, 2007.

  • "Microminiature packaging and integrated circuitry: The work of E. F. Rent, with an application to on-chip interconnection requirements," M. Y. Lanzerotti, G. Fiorenza, R. A. Rand, IBM J. Res. Dev., vol. 49, pp. 777-803, Sept. 2005.

  • "Interpretation of Rent's rule for ultralarge-scale integrated circuit designs, with an application to wirelength distribution models," M. Y. Lanzerotti, G. Fiorenza, R. A. Rand, IEEE Transactions on VLSI Design, vol. 12, pp. 1330-1347, Dec. 2004.


    On-chip interconnect requirements

  • "Characterization of the impact of interconnect design on the capacitive load driven by a global clock distribution," G. G. Lopez, G. Fiorenza, T. Bucelot, P. Restle, M. Y. Lanzerotti, Proceedings of the 2005 ACM Great Lakes Symposium on VLSI (GLSVLSI), Chicago, IL, pp. 38-43, April 17-19, 2005.

  • "Predicting interconnect requirements in ultra-large-scale integrated control logic circuitry," Proceedings of the Workshop on System-Level Interconnect Prediction, San Francisco, CA, pp. 43-50, April 2-3, 2005.

  • "Assessment of on-chip wire-length distribution models," M. Y. Lanzerotti, G. Fiorenza, R. A. Rand, IEEE Transactions on VLSI Design, vol. 12, pp. 1108-1112, Oct. 2004.

  • "Circuit and wire contributions to clock power in Server Group microprocessor designs," G. G. Lopez, G. Fiorenza, T. Bucelot, P. Restle, M. Y. Lanzerotti, IBM Austin Conference on Energy-Efficient Design, Mar. 2004.

    Statistical models for the VLSI route problem

  • "Estimating the efficiency of collaborative problem-solving, with applications to chip design," M. Y. Lanzerotti Wisniewski, E. Yashchin, R. L. Franch, D. P. Conrady, G. Fiorenza, I. C. Noyan, American Statistical Association Section on Quality and Productivity, pp. 4861-4866 (2003).

  • "The physical design of on-chip interconnections," M. Y. Lanzerotti Wisniewski, E. Yashchin, R. L. Franch, D. P. Conrady, G. Fiorenza, I. C. Noyan, IEEE Transactions on Computer-Aided Design, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 22, 254-276 (2003).

  • "Estimating the efficiency of collaborative problem-solving, with applications to chip design," M. Y. Lanzerotti Wisniewski, E. Yashchin, R. L. Franch, D. P. Conrady, G. Fiorenza, and I. C. Noyan, IBM J. Res. Dev 47, 77 (2003).


    Non-linear and quantum optics

  • "Measurements of Quantum Noise in Optical Phase Conjugation via Four-Wave Mixing in an Atomic Vapor," M. Y. Lanzerotti, R. W. Schirmer, A. L. Gaeta, and G. S. Agarwal, Phys. Rev. A 60, 4980 (1999).

  • "Quantum Theory of Noise in Phase Conjugation by Backward Four-Wave Mixing in an Atomic Vapor," R. W. Schirmer, M. Y. Lanzerotti, A. L. Gaeta, and G. S. Agarwal, Phys. Rev. A 55, 3155 (1997).

  • "Phase Conjugation of Weak Continuous-Wave Optical Signals," M. Y. Lanzerotti, R. W. Schirmer, A. L. Gaeta, G. S. Agarwal, Phys. Rev. Lett. 77, 2202 (1996).

  • "High-Reflectivity, Wide-Bandwidth Optical Phase Conjugation via Four-Wave Mixing in Potassium Vapor," M. Y. Lanzerotti, R. W. Schirmer, A. L. Gaeta, Appl. Phys. Lett. 69, 1199 (1996).

  • "Quantum Noise in Optical Phase Conjugation Performed in an Atomic Vapor," M. Y. Lanzerotti, R. W. Schirmer, A. L. Gaeta, and G. S. Agarwal, in Proc. 7th Rochester Conference on Coherence and Quantum Optics, J. H. Eberly, L. Mandel, and E. Wolf, eds., Plenum Press (1996).

  • "Optical phase conjugation with very weak continuous-wave signals," M. Y. Lanzerotti, R. W. Schirmer, and A. L. Gaeta, in Proc. Quantum Electronics and Laser Science Conference(QELS), QFB7 (1996).

  • "Theory of Quantum Optical Measurements with a Phase-Conjugate Mirror," M. Y. Lanzerotti, A. L. Gaeta, Phys. Rev. A 51, 4057 (1995).

  • "Optical Phase Conjugation of Nonclassical Fields," M. Y. Lanzerotti, A. L. Gaeta, and R. W. Boyd, Phys. Rev. A 51, 3182 (1995).


    Low-temperature physics

  • "The Onset of Superfluidity in 4He Films Adsorbed in Aerogel Glass," P. A. Crowell, M. Y. Lanzerotti, and J. D. Reppy, J. Low Temp. Phys. 89, 629 (1992).


    Electron microscopy

  • "Incoherence Effects in Reflection Electron Microscopy," A. Howie, M. Y. Lanzerotti, and Z. L. Wang, Microsc. Microanal. Microstruct. 3, 233 (1992).

  • "Convergent Beam RHEED of GaAs(110) in a STEM: Theory and Experiment," A. L. Bleloch, A. Howie, and M. Y. Lanzerotti, Proc. 12th International Congress for Electron Microscopy, San Francisco Press, 1990.

  • "Silicon Oxidation studied by in-situ TEM, " J. M. Gibson and M. Y. Lanzerotti. Ultramicroscopy 31, 29 (1989).

  • "Plan-view Transmission Electron Diffraction Measurement of Roughness at Buried Si/SiO2 Interfaces," J. M. Gibson, M. Y. Lanzerotti, and V. Elser, Appl. Phys. Lett. 55, 1394 (1989).

  • "Observation of Interfacial Atomic Steps During Silicon Oxidation," J. M. Gibson and M. Y. Lanzerotti, Nature 340, 128 (1989).

  • "In-situ Studies of Silicon Oxidation," J. M. Gibson and M. Y. Lanzerotti, Mat. Res. Soc. Symp. Proc. 139, 67 (1989).

  • "A Novel Method for Study of Roughness at Buried Interfaces by Plan View TEM: Si/SiO2, " J. M. Gibson and M. Y. Lanzerotti, Mat. Res. Soc. 355 (1989).

  • "TEM of in-situ Deposited Films on Silicon," J. M. Gibson, J. L. Batstone, and M. Y. Lanzerotti, Proc. NATO Adv. Res. Workshop 295 (1989).


    Atomic physics

  • "Slow Proton Emission from Noble Gas Solids," A. P. Mills, Jr., M. Leventhal, M. Y. Lanzerotti, D. M. Zuckerman, E. M. Gullikson, and G. R. Brandes, Phys. Rev. B. 42, 5973 (1990).

    Patents:

    Digital instant camera having a printer.

    United States Patent 6628333. Inventors: Gowda, Sudhir Muniswamy (Ossining, NY), Lanzerotti, Mary Yvonne (Carmel, NY), Pearson, Dale Jonathan (Yorktown Heights, NY), Wong, Hon-sum Philip (Chappaqua, NY). Application Number: 08/967853. Publication Date: 09/30/2003.

    Method of extracting properties of back end of line (BEOL) chip architecture.

    United States Patent 7260810. Inventors: Filippi Jr., Ronald G. (Wappingers Falls, NY, US), Fiorenza, Giovanni (Pomona, NY, US), Liu Xiao Hu, Croton-on-Hudson, NY, US), Murray, Conal Eugene (Yorktown Heights, NY, US), Northrop, Gregory Allen (Putnam Valley, NY, US), Shaw, Thomas M. (Peekskill, NY, US), Wachnik, Richard Andre′ (Mount Kisco, NY, US), Wisniewski, Mary Yvonne Lanzerotti (Yorktown Heights, NY, US). Application Number: 10/68747. Publication Date: 08/21/2007.

    System for identification of defects on circuits or other arrayed products.

    United States Patent 7346470. Inventors: Wisniewski, Mary (Yorktown Heights, NY, US), Yashchin, Emmanuel (Yorktown Heights, NY, US), Landers, Christina (Wappingers Falls, NY, US), Takken, Asya (Brewster, NY, US), Trapp, Brian (Poughkeepsie, NY, US). Application Number: 10/459132. Publication Date: 03/18/2008.

    Design structure and system for identification of defects on circuits or other arrayed products.

    United States Patent 7752581. Inventors: Lanzerotti, Mary (Trumbull, CT, US), Yashchin, Emmanuel (Yorktown Heights, NY, US), Landers, Christina (Wappingers Falls, NY, US), Takken, Asya (Brewster, NY, US), Trapp, Brian (Poughkeepsie, NY, US). Application Number: 11/926605. Publication Date: 07/06/2010.

  •  
    Directory Home
    Expertise Directory


    DLR TGS 20 Dec 2011