|Student Name:||1st Lt Elizabeth Scherrer|
|Thesis:||Damage Equivalency Study of Ions and Neutrons in Silicon Bipolar Junction Transistors|
|Location:||Bldg 470, Rm 207|
|Date & Time:||01/22/2013 at 1330|
|Abstract:|| Testing silicon bipolar junction transistors in a high-flux, short pulse neutron source when no such controlled source exists requires alternative testing means. Silicon ion and low-flux neutron sources are explored as possible alternatives to a high-flux, short pulse neutron source. Though neutrons caused displacement damage uniformly throughout the device, silicon ions targeted only the emitter-base junctions. Previous studies used the annealing factor to compare damage, but the annealing factor did not provide a valid means of comparison between the two radiation types when neutron-activated products are present. Late-time collector-base gain and emitter current measurements provided another means for establishing damage equivalency. A short pulse fluence of 7.2E13 n/cm^2 equated to heavy ion irradiation of 5.3E8 ions/cm^2; when using a low-flux, long pulse neutron source, a lower fluence is required due to the additional damage caused by activated products. A Davinci-based model was employed to validate experimental results. In summary, ions that cause non-localized damage are recommended as a possible neutron substitute.