Dr. Nancy C. Giles

Professor of Physics

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Comm: 937-255-3636 x4601
DSN: 785-3636 x4601
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Education

The University of North Carolina at Chapel Hill        Dec. 1981        B.S. in Physics          

North Carolina State University                                 May 1987        Ph.D. in Physics

            Ph.D. Dissertation:  "Optical Properties of Novel II-VI Semiconductor  Films and Quantum Well Structures" (advisor: J. F. Schetzina)

Publications

Book Chapters

 “Electron Paramagnetic Resonance (EPR) from b-Ga2O3 crystals,” N. C. Giles and L. E. Halliburton, submitted as Chapter 8 in Gallium Oxide (Ga2O3): Technology, Devices and Applications, edited by S. Pearton, M. Mastro, and F. Ren (Elsevier, October 2018).

 "HgTe-CdTe Superlattices", J.R. Meyer, C.A. Hoffman, T.H. Myers, and N.C. Giles, Chapter 7 in Handbook of Semiconductors:  Materials, Properties, and Preparation, Volume 3a, edited by S. Mahajan (North Holland, Amsterdam, 1994), pp. 535 - 593.

List of Refereed Publications  *Citation record from Web of Science (all databases): Searching for N. C. Giles and N. C. Giles-Taylor  (few papers appear under other name versions); *As of Feb 2021:  5720 total career citations of my publications; h-index is 39.

205.  “Zn Acceptors in beta-Ga2O3 crystals,” T. D. Gustafson, J. Jesenovec, C. A. Lenyk, N. C. Giles, J.S. McCloy, M. D. McCluskey, and L. E. Halliburton, Journal of Applied Physics (in press, April 2021).

204.  “Photoinduced trapping of charge at sulfur vacancies and copper ions in photorefractive Sn2P2S6 crystals,” T. D. Gustafson, E. M. Golden, E. M. Scherrer, N. C. Giles, A. A. Grabar, S. A. Basun, D. R. Evans, J. E. Slagle, and L. E. Halliburton, Journal of Applied Physics, vol. 129, article no. 085702 (Feb 2021).

203.  “Deep donor behavior of iron in beta-Ga2O3 crystals: Establishing the Fe4+/3+ level,” T. D. Gustafson, C. A. Lenyk, L. E. Halliburton, and N. C. Giles, Journal of Applied Physics, vol. 128, article no. 145704 (8 pages) (14 Oct 2020).

202.  “Charge trapping by iodine ions in photorefractive Sn2P2S6 crystals,” E. M. Scherrer, N. C. Giles, T. E. R. Dodson, A. Grabar, D. Evans, S. Basun, J. Slagle, and L. E. Halliburton, Journal of Chemical Physics, vol. 153, article no. 144503 (9 pages) (13 Oct 2020).

201.  “Experimental determination of the (0/-) level for Mg acceptors in b-Ga2O3 crystals,” C.A. Lenyk, T.D. Gustafson, S.A. Basun, L.E. Halliburton, and N.C. Giles, Applied Physics Letters, vol. 116, article no. 142101 (5 pages) (April 2020).

 

200.  “Near-infrared-sensitive photorefractive Sn2P2S6 crystals grown by the Bridgman method,” O. Shumelyik, A. Voldov, Y. Skrypka, L. E. Halliburton, N. C. Giles, C. A. Lenyk, S. Basun, A. Grabar, Y. Vysochanskii, S. Odoulov, and D. Evans, Journal of Applied Physics Vol. 127, article no. 103103 (8 pages) (Mar 2020).

199.  “Deep donors and acceptors in ß-Ga2O3 crystals:  Determination of the Fe2+/3+ level by a noncontact method,” C.A. Lenyk, T.D. Gustafson, L.E. Halliburton, and N.C. Giles, Journal of Applied Physics vol. 126, article no. 245701 (Dec 2019).

198.  “Self-trapped holes (small polarons) in ferroelectric KH2PO4 crystals,”  T. E. R. Dodson, L. E. Halliburton, G. S. Kedziora, C. A. Lenyk, and N. C. Giles, J. Physics: Condensed Matter Vol 31, article no. 505503 (Sept 2019).

197.  “Ir4+ ions in ß-Ga2O3 crystals:  An unintentional deep donor,” C.A. Lenyk, N. C. Giles, E. M. Scherrer, B. E. Kananen, L. E. Halliburton, K. T. Stevens, G. K. Foundos, J. D. Blevins, D. L. Dorsey, and S. Mou, Journal of Applied Physics, vol. 127, article no. 045703 (8 pages) (Jan 2019).

196. “Lithium and gallium vacancies in LiGaO2 crystals,” C.A. Lenyk, M. S. Holston, B. E. Kananen, L. E. Halliburton, and N. C. Giles, Journal of Applied Physics. Vol. 124, article no. 135702 (6 pages) (Oct 2018).

195. “Electron paramagnetic resonance and optical absorption study of acceptors in CdSiP2 crystals,” E. M. Scherrer, L. E. Halliburton, E. M. Golden, K. T. Zawilski, P. G. Schunemann, F. K. Hopkins, K. L. Averett, and N. C. Giles, AIP Advances vol 8, article no. 095014 (11 pages) (Sept 2018).

194. “Status of CdSiP2 Development for Scaling Mid-Infrared Laser Power,” C.M. Liebig, F.K. Hopkins, K.L. Averett, K.T. Zawilski, P.G. Schunemann, E.M. Scherrer, N.C. Giles, and L.E. Halliburton, Laser Technology for Defense and Security XIV, Proc. of SPIE Vol. 10637, paper no. 106370U (May 2018).

193. “Copper-doped lithium triborate (LiB3O5) crystals:  A photoluminescence, thermoluminescence, and electron paramagnetic resonance study,” B. E. Kananen, J. W. McClory, N. C. Giles, and L. E. Halliburton, Journal of Luminescence, volume 194, pp. 700-705 (Feb 2018).

192.  “Self-trapped holes in ß-Ga2O3 crystals,” B. E. Kananen, L. E. Halliburton, G.K. Foundos, K. B. Chang, and K. T. Stevens, Journal of Applied Physics, volume 122, article no. 215703 (6 pages) (Dec 2017).

191.  “Electron paramagnetic resonance study of neutral Mg acceptors in ß-Ga2O3 crystals,” B. E. Kananen, L. E. Halliburton, E. M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, and N. C. Giles, Applied Physics Letters 111, article no. 072102 (5 pages) (Aug 2017).

190.  “Gallium vacancies in ß-Ga2O3 crystals,” B. E. Kananen, L. E. Halliburton, K. T. Stevens, G. K. Foundos, and N. C. Giles, Applied Physics Letters 110, article no. 202104 (5 pages) (May 2017).

189. “Defect-related optical absorption bands in CdSiP2 crystals,”  E. M. Scherrer, B. E. Kananen, E. M. Golden, F. K. Hopkins, K. T. Zawilski, P. G. Schunemann, L. E. Halliburton, and N. C. Giles, Optical Materials Express, volume 7, pp. 658-664 (March 2017).

188. “Dual role of Sb ions as electron traps and hole traps in photorefractive Sn2P2S6 crystals,” B. E. Kananen, E. M. Golden, S. A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, J. W. McClory, N. C. Giles, and L. E. Halliburton, Optical Materials Express, volume 6, pp. 3992-3999 (Dec 2016)

187.  “Sn vacancies in photorefractive Sn2P2S6 crystals: An EPR study of an optically active hole trap,” E. M. Golden, S. A. Basun, A. A. Grabar, N. C. Giles, D. R. Evans, and L. E. Halliburton, Journal of Applied Physics, vol 120, article no. 133101 (Oct 2016).

186.  “Optically stimulated luminescence (OSL) from Ag-doped Li2B4O7 crystals” B. E. Kananen, E. S. Maniego, E. M. Golden, N. C. Giles, J. W. McClory, V.T. Adamiv, Ya. V. Burak, and L. E. Halliburton, Journal of Luminescence, volume 177, pp. 190-196 (April 2016).

185.  “Identification of the zinc-oxygen divacancy in ZnO crystals,” M. S. Holston, E. M. Golden, B. E. Kananen, J. W. McClory, N. C. Giles, and L. E. Halliburton, Journal of Applied Physics, volume 119, article no. 145701 (7 pages) (April 2016).

184. “Green luminescence from Cu-diffused LiGaO2 crystals,” M. S. Holston, I. P. Ferguson, N. C. Giles, J. W. McClory, D. J. Winarski, Jianfeng Ji, F. A. Selim, and L. E. Halliburton, Journal of Luminescence, volume 170, pp. 17-23 (Feb 2016).

183.  “Identification of native defects (vacancies and antisites) in CdSiP2 crystals” E. M. Golden, N. C. Giles, E. Maniego, F. K. Hopkins, K. T. Zawilski, P. G. Schunemann, and L. E. Halliburton, Journal of Applied Physics 118, article no. 185702 (8 pages) (Nov 2015).

182. “Oxygen vacancies in LiAlO2 crystals,” M.S. Holston, I. P. Ferguson, J. W. McClory, N. C. Giles, and L. E. Halliburton, Physical Review B volume 92, article no. 144108 (9 pages) (Oct 2015).

181.  “Identification of defects responsible for optically stimulated luminescence (OSL) from copper-diffused LiAlO2 crystals,” M. S. Holston, I. P. Ferguson, N. C. Giles, J. W. McClory, and L. E. Halliburton, Journal of Luminescence 164, pp. 105-111 (August 2015).

180.  “Interstitial silicon ions in rutile TiO2 crystals,” E.M. Golden, N. C. Giles, S. Yang, and L. E. Halliburton, Physical Review B 91, article no. 134110 (7 pages) (April 2015).

179.  “Radiation-induced defects in LiAlO2 crystals:  Holes trapped by lithium vacancies and their role in thermoluminescence,” M.S. Holston, J. W. McClory, N. C. Giles, and L. E. Halliburton, Journal of Luminescence 160, pp. 43-49 (April 2015).

178.  “Sulfur vacancies in photorefractive Sn2P2S6 crystals," E. M. Golden, S. A. Basun, A. A. Grabar, I. M. Stoika, N. C. Giles, D. R. Evans, and L. E. Halliburton, Journal of Applied Physics 116, article no. 244107 (8 pages) (Dec 2014).

177.  “Copper doping of ZnO crystals by transmutation of 64Zn to 65Cu: An electron paramagnetic resonance and gamma spectroscopy study,” M.C. Recker, J.W. McClory, M.S. Holston, E.M. Golden, N.C. Giles, and L.E. Halliburton, Journal of Applied Physics 115, article no. 243706 (6 pages) (June 2014).

176.  “Photoluminescence from Ag2+ ions in lithium tetraborate (Li2B4O7) crystals,” A.T. Brant, D. A. Buchanan, J.W. McClory, V.T. Adamiv, Ya. V. Burak, L. E. Halliburton, and N. C. Giles, Journal of Luminescence 153, pp.79-84 (April 2014).

175.  “Triplet ground state of the neutral oxygen-vacancy donor in rutile TiO2,” A. T. Brant, E. M. Golden, N. C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A.Tryk, A. Manivannan, and L. E. Halliburton, Physical Review B 89, article no. 115206 (10 pages) (March 2014).

174.   "Neutral nitrogen acceptors in ZnO: The 67Zn hyperfine interactions," E. M. Golden, S. M. Evans, L. E. Halliburton, and N. C. Giles, Journal of Applied Physics 115, article no. 103703 (7 pages) (March 2014).

173.  “Ground state of the singly ionized oxygen vacancy in rutile TiO2,” A. T. Brant, N. C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, and L. E. Halliburton, Journal of Applied Physics 114, article no. 113702 (10 pages) (Sept 2013).

172.  “Intrinsic small polarons (Sn3+ ions) in photorefractive Sn2P2S6 crystals,” A. T. Brant, L. E. Halliburton, N. C. Giles, S. A. Basun, A. A. Grabar, and D. R. Evans, Journal of Physics: Condensed Matter 25, article no. 205501 (5 pages) (May 2013).

171.  “Intrinsic small polarons in rutile TiO2 crystals,” Shan Yang, A. T. Brant, N. C. Giles, and L. E. Halliburton, Physical Review B 87, article no. 125201 (6 pages) (March 2013).

170.  “Insertion of lithium ions into TiO2 (rutile) crystals:  an EPR study of the Li-associated Ti3+ small polaron,” A. T. Brant, N. C. Giles, and L. E. Halliburton, Journal of Applied Physics 113, article no. 053712 (6 pages) (Feb 2013).

169.  “Photoinduced EPR study of Sb2+ ions in photorefractive Sn2P2S6 crystals,” A. T. Brant, L. E. Halliburton, S. A. Basun, A. A. Grabar, S. G. Odoulov, A. Shumelyuk, N. C. Giles, and D. R. Evans, Physical Review B 86, article no. 134109 (Oct 2012).

168.  “Terahertz generation by optical rectification in uniaxial birefringent crystals,” J. D. Rowley, J. K. Wahlstrand, K. T. Zawilski, P. G. Schunemann, N. C. Giles, and A. D. Bristow, Optics Express 20, no. 15, pp. 16968-16973 (July 2012).

167.  “Broadband terahertz pulse emission from ZnGeP2,” J. D. Rowley, J. K. Pierce, A. T. Brant, L. E. Halliburton, N. C. Giles, P. G. Schunemann, and A. D. Bristow, Optics Letters 37, pp. 788-790 (March 2012).

166.  “Hydrogen donors and Ti3+ ions in reduced TiO2 crystals”, A. T. Brant, Shan Yang, N. C. Giles, and L. E. Halliburton, Journal of Applied Physics 110, article no. 053714 (7 pages) (published online Sept 2011; appeared in print Sept 2011 issue no. 5).

165.  “Oxygen vacancies adjacent to Cu2+ ions in TiO2 (rutile) crystals”, A. T. Brant, Shan Yang, N. C. Giles, M. Zafar Iqbal, A. Mannivannan, and L. E. Halliburton, Journal of Applied Physics 109, article no. 073711 (7 pages) (published online April 2011).

164.  “Characterization of Green-Emitting Translucent Zinc Oxide Ceramics Prepared Via Spark Plasma Sintering”, Mei Hong, Daniela Fredrick, David M. DeVito, Jany Y. Howe, Xiaocheng Yang, Nancy C. Giles, John S. Neal, and Zuhair A. Munir, International Journal of Applied Ceramic Technology (2010), on-line (doi:10.1111/j.1744-7402.2010.02527.x).

163.  “Optical and EPR study of point defects in CdSiP2 crystals”, N. C. Giles, L. E. Halliburton, Shan Yang, Xiaocheng Yang, A. T. Brant, N. C. Fernelius, P. G. Schunemann, and K. T. Zawilski, Journal of Crystal Growth 312, pp.1133-1137 (2010); on-line (doi:10.1016/ j.jcrysgro.2009.10.009).

162.  “Investigation of ZnO-based polycrystalline ceramic scintillators for use as a-particle detectors”, John S. Neal, David M. Devito, Beth L. Armstrong, Mei Hong, Banu Kesanli, Xiaocheng Yang, Nancy C. Giles, Jane Y. Howe, Joanne O. Ramey, Dariusz J. Wisniewski, Monika Wisniewska, Zuhair A. Munir, and Lynn A. Boatner, IEEE Transactions of Nuclear Sciences, vol. 56, no. 3, pp. 892-898 (June 2009).

161.  “Hall effect analysis of bulk ZnO comparing different crystal growth techniques,” Xiaocheng Yang and N. C. Giles, Journal of Applied Physics 105, article no. 063709/8 pages (2009).

160.  “A Simple Aqueous Metathesis Reaction Yields New Lanthanide Monothiophosphates,” Nathan J. Takas, Lauren E. Slomka, Xiaocheng Yang, Nancy Giles, and Jennifer A. Aitken, Journal of Solid State Chemistry 181, pp. 3044-3050 (2008).

159.  “Intrinsic electron mobilities in CdSe, CdS, ZnO, and ZnS and analysis of temperature-dependent Hall measurements,” Xiaocheng Yang, Chunchuan Xu, and N. C. Giles, Journal of Applied Physics 104, article no. 073727/6 pages (2008).

158.  “Evaluation of melt-grown ZnO single crystals for use as alpha-particle detectors,” John S. Neal, Nancy C. Giles, Xiaocheng Yang, R. Andrew Wall, K. Burak Ucer, Richard T. Williams, Dariusz J. Wisniewski, Lynn A. Boatner, Varathajan Rengarajan, Jeff Nause, and Bill Nemeth, IEEE Transactions on Nuclear Sciences, vol. 55, pp. 1397-1403 (2008).

157.  “EPR and optical study of oxygen and zinc vacancies in electron-irradiated ZnO,” L. A. Kappers, O. R. Gilliam, S. M. Evans, L. E. Halliburton, and N. C. Giles, Nuclear Instruments and Methods in Physics Research B, vol. 266, issues12/13, pp. 2953-2957 (2008).

156.  “Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO,” S. M. Evans, N. C. Giles, L. E. Halliburton, and L. A.. Kappers, Journal of Applied Physics 103, article no. 043710/7 pages (2008).

155.  “Role of neutral impurity scattering in the analysis of Hall data from ZnO and other II-VI materials,” Xiaocheng Yang, Chunchuan Xu, and N. C. Giles, in Zinc Oxide and Related Materials—2007, edited by D.P. Norton, C. Jagadish, I. Buyanova, and G-C. Yi (Mater. Res. Soc. Symp. Proc. Volume 1035E, Warrendale, PA, 2008), L04-07.

154.  “Effect of Co Doping on the Structural, Optical and Magnetic Properties of ZnO,” J. Hays, K. M. Reddy, N. Y. Garces, M. H. Engelhard, V. Shutthanandan, M. Luo, C. Xu, N. C. Giles, C. Wang, S. Thevuthasan and A. Punnoose, Journal of Physics: Condensed Matter 19, article no. 266203/24 pages (2007).

153.  “Hydrothermal growth and characterization of indium-doped-conducting ZnO crystals,” Buguo Wang, Michael Callahan, Chunchuan Xu, Lionel Bouthillette, Nancy C. Giles, and David Bliss, Journal of Crystal Growth 304, pp. 73-79 (2007).

152.  “Persistent photoinduced changes in charge states of transition-metal donors in hydrothermally grown ZnO crystals,” Yongquan Jiang, N. C. Giles, and L. E. Halliburton, Journal of Applied Physics 101, article no. 093706/1-8 (2007).

151.  “Persistent photoinduced changes in charge states of donors and acceptors in hydrothermally grown ZnO,” N. C. Giles, Yongquan Jiang, Xiaocheng Yang, S. M. Evans, and L. E. Halliburton, Materials Research Society Symp. Proc. Vol. 957, pp. 29-34 (2007).

150.  “Effects of phonon coupling and free carriers on band-edge emission at room temperature in n-type ZnO crystals,” N. C. Giles, Chunchuan Xu, M. J. Callahan, Buguo Wang, J. S. Neal, and L. A. Boatner, Applied Physics Letters 89, article no. 251906/1-3 (2006).

149.  “Comparative Investigation of the Performance of ZnO-Based Scintillators for Use as Alpha Particle Detectors,” J. S. Neal, L. A. Boatner, N. C. Giles, L. E. Halliburton, S. E. Dorenzo, E. D. Bourret, Nuclear Instruments and Methods in Physics Research A 568, pp. 803-809 (2006).

148.  “Optical and electrical characterization of cadmium selenide doped with cobalt,” Ming Luo, Yongquan Jiang, Chuchuan Xu, Xiaocheng Yang, A. Burger, and N. C. Giles, Journal of Physics and Chemistry of Solids 67, pp. 2596-2602 (2006).

147.  “Electron paramagnetic resonance and electron-nuclear double resonance study of Mn2+ ions in CdGeAs2,” S. M. Evans, N. Y. Garces, R. C. DeMattei, R. S. Feigelson, N. C. Giles, and L. E. Halliburton, Physica Status Solidi B 245, pp. 4070-4079 (2006).

146.  “Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1-xCdxTe grown by molecular beam epitaxy,” C. H. Swartz, S. Chandril, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, E. C. Piquette, C. S. Kim, I. Vurgaftman, and J. R. Meyer, Journal of Electronic Materials 35, pp. 1360-1368 (2006).

145.  “Optical and Electron Paramagnetic Resonance Spectroscopies of Diffusion-Doped Co2+:ZnSe,” Ming Luo, N. Y. Garces, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold Burger, Journal of Applied Physics 99, article no. 073709/1-7 (2006).

144.  “Effects of Free Carriers on Electron Mass and Infrared Absorption in n-type CdGeAs2, Chunchuan Xu, Lihua Bai, and N. C. Giles, Journal of Physics: Condensed Matter 18, pp. 2741-2747 (2006).

143.  “Electron paramagnetic resonance of a donor in aluminum nitride crystals,” S. M. Evans, N. C. Giles, L. E. Halliburton, G. Slack, S. B. Schujman, and L. J. Schowalter, Applied Physics Letters 88, article no. 062112/1-3 (2006).

142.  “Correlation of Electrical and Optical Properties of p-type CdGeAs2, Lihua Bai, Chunchuan Xu, N. C. Giles, K. Nagashio, and R. S. Feigelson, Journal of Applied Physics 99, article no. 013512/1-5 (2006).

141.  “Production of native donors in ZnO by annealing at high temperature in zinc vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihua Bai, and Lynn Boatner, Applied Physics Letters 87, article no. 172108/1-3 (2005).

140.  “Energy transfer between Co2+ and Fe2+ ions in diffusion-doped ZnSe,” Ming Luo, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold Burger, Journal of Applied Physics 98, article no. 083507/1-6 (2005).

139.  “Photoluminescence of n-type CdGeAs2, Lihua Bai, Chunchuan Xu, K. Nagashio, Chunhui Yang, R.S. Feigelson, P. G. Schunemann, and N. C. Giles, Journal of Physics: Condensed Matter 17, pp. 5687-5696 (2005).

138.  “Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1-xMgSe grown by molecular beam epitaxy,” B. L. VanMil, R. P. Tompkins, Ke Feng, C. H. Swartz, N. C. Giles, and T. H. Myers, Journal of Vacuum Sci. and Technology B 23, pp. 1814-1820 (2005).

137.  “Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy,” Kyoungnae Lee, B. L. VanMil, Ming Luo, Lijun Wang, N. C. Giles, and T. H. Myers, Physica Status Solidi C 2, pp. 2204-2207 (2005).

136.  “Optical Properties of Cl-doped ZnSe Epilayers grown on GaAs substrates,” B. C. Karrer, F. C. Peiris, Brenda VanMil, Ming Luo, N. C. Giles, and Thomas H. Myers, Journal of Electronic Materials 34, pp. 944-948 (2005).

135.  “Shallow Donor Generation in ZnO by Remote Hydrogen Plasma,” Yuri M. Strzhemechny, Howard L. Mosbacker, Steven H. Goss, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, and Larry E. Halliburton, Shigeru Niki, and Leonard J. Brillson, Journal of Electronic Materials 34, pp. 399-403 (2005).

134.  “Urbach Rule Used to Explain the Variation of Absorption Edge in CdGeAs2, Lihua Bai, Chunchuan Xu, P. G. Schunemann, K. Nagashio, R. S. Feigelson, and N. C. Giles, Journal of Physics: Condensed Matter 17, pp. 549-558 (2005).

133.  “Temperature dependence of polarized absorption bands in p-type CdGeAs2, Lihua Bai, N. C. Giles, and P. G. Schunemann, Journal of Applied Physics 97, article no. 023105/1-6 (Jan 15, 2005).

132.  “Photoluminescence of ZnTe and ZnTe:Cr Grown by Molecular Beam Epitaxy,” Ming Luo, B. L. VanMil, R. P. Tompkins, T. H. Myers, and N. C. Giles, Journal of Applied Physics 97, article no. 013518/1-8 (Jan 1, 2005).

131.  “Infrared Absorption from OH- Ions Adjacent to Lithium Acceptors in Hydrothermally Grown ZnO”, L. E. Halliburton, Lijun Wang, Lihua Bai, N. Y. Garces, N. C. Giles, M. J. Callahan, and Buguo Wang, Journal of Applied Physics 96, pp. 7168-7172 (2004).

130.  “Correlation between dislocation etch pits and optical absorption in CdGeAs2, K. Nagashio, A. Watcharapasorn, K. T. Zawilski, R. C. DeMattei, R. S. Feigelson, L. Bai, N. C. Giles, L. E. Halliburton, and P. G. Schunemann, Journal of Crystal Growth 269, pp. 195-206 (2004).

129.  “Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy", B. L. VanMil, Kyoungnae Lee, Lijun Wang, N. C. Giles, and T. H. Myers, Materials Research Society Proceedings Vol. 798, pp. 503-508 (2004).

128.  “Investigation of Multiple Carrier Affects in InN Epilayers Using Variable Magnetic Field Spectroscopy,” Craig H. Swartz, Randy P. Tomkins, Nancy C. Giles, Thomas H. Myers, Hai Lu, William J. Schaff, and Lester F. Eastman, Journal of Crystal Growth 269, pp. 29-34 (2004).

127.  “Luminescence Study of Donors and Acceptors in CdGeAs2, Lihua Bai, P. G. Schunemann, T. M. Pollak, and N. C. Giles, Optical Materials 26, pp. 501-505 (2004).

126.  “Molecular Beam Epitaxy Growth of High-Quality Arsenic-Doped HgCdTe”, D. Edwall, E. Piquette, J. Ellsworth, J. Arias, C. H. Swartz, L. Bai, R. P. Tompkins, N. C. Giles, T. H. Myers, and M. Berding, Journal of Electronic Materials 33, pp. 752-756 (2004).

125.  “Fundamental Materials Studies of Undoped, In-doped and As-doped HgCdTe”, C. H. Swartz, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, J. Ellsworth, E. Piquette, J. Arias, M. Berding, S. Krishnamurthy, I. Vurgaftman, and J. R. Meyer, Journal of Electronic Materials 33, pp. 728-736 (2004).

124.  “Optical absorption and electron-nuclear double resonance study of Ni+ ions in AgGaSe2 crystals”, K. T. Stevens, N. Y. Garces, Lihua Bai, N. C. Giles, L. E. Halliburton, S. D. Setzler, P. G. Schunemann, T. M. Pollak, R. K. Route, and R. S. Feigelson, Journal of Physics: Condensed Matter 16, pp. 2593-2607 (2004).

123.  “Determination of the Nitrogen Acceptor Ionization Energy of Nitrogen Acceptors in Zinc Oxide by Photoluminescence Spectroscopy”, Lijun Wang, N. Y. Garces, L. E. Halliburton, and N. C. Giles, Materials Research Society Proceedings Vol. 799, pp. 261-266 (2004).

122.  “Donor-Acceptor Pair Emission Near 0.55 eV in CdGeAs2, Lihua Bai, N. C. Giles, P. G. Schunemann, T. M. Pollak, K. Nagashio, and R. S. Feigelson, Journal of Applied Physics 95, pp. 4840-4844 (2004).

121.  “Determination of the Ionization Energy of Nitrogen Acceptors in Zinc Oxide Using Photoluminescence Spectroscopy”, Lijun Wang and N. C. Giles, Applied Physics Letters 84, pp. 3049-3051 (2004).

120.  “Remote Hydrogen Plasma Doping of Single Crystal ZnO,” Yuri M. Strzhemechny, Howard L. Mosbacker, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, and Larry E. Halliburton, Shigeru Niki, and Leonard J. Brillson, Applied Physics Letters 84, pp. 2545-2547 (2004).

119.  “Luminescence and optical absorption study of p-type CdGeAs2, Lihua Bai, J. A. Poston, Jr., P. G. Schunemann, K. Nagashio, R. S. Feigelson, and N. C. Giles, Journal of Physics: Condensed Matter 16, pp. 1279-1286 (2004).

118.  “Electron Paramagnetic Resonance of Cr2+ and Cr4+ Ions in CdGeAs2 Crystals”, N. Y. Garces, N. C. Giles, L. E. Halliburton, P. G. Schunemann, R. Feigelson, K. Nagashio, Journal of Applied Physics 94, pp. 7567-7570 (2003).

117.  “Temperature Dependence of the Free-Exciton Transition Energy in Zinc Oxide”, Lijun Wang and N. C. Giles, Journal of Applied Physics 94, pp. 973-978 (2003).

116.  “Thermal Diffusion of Lithium Acceptors into ZnO Crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, D. C. Look, and D. C. Reynolds, Journal of Electronic Materials 32, pp. 766-771 (2003).

115.  “Luminescence Study of ZnTe:Cr Epilayers Grown by MBE”, Ming Luo, B. L. VanMil, R. P. Tompkins, Y. Cui, T. Mounts, U. N. Roy, A. Burger, T. H. Myers, and N. C. Giles, Journal of Electronic Materials 32, pp. 737-741 (2003).

114.  “Molecular Nitrogen (N2-) Acceptors and Isolated Nitrogen (N-) Acceptors in ZnO Crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, and D. B. Eason, Journal of Applied Physics 94, 519-524 (2003).

 

113.  “Infrared Absorption Bands Related to Native Defects in ZnGeP2, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, K. T. Stevens, P. G. Schunemann, S. D. Setzler, and T. M. Pollak, Journal of Applied Physics 93, 8975-8981 (2003).

 

112. “Optical and EPR Study of Defects in Cadmium Germanium Arsenide”, Lihua Bai, N. Y. Garces, Nanying Yang, P. G. Schunemann, S. D. Setzler, T. M. Pollak, L. E. Halliburton, and N. C. Giles, Materials Research Society Proceedings Vol. 744, 537-542 (2003).

 

111. “Luminescence and EPR Study of Lithium-Diffused ZnO Crystals”, N. Y. Garces, L. Wang, M. M. Chirila, L. E. Halliburton, and N. C. Giles, Mater. Res. Soc. Proc. Vol. 744, 87-92 (2003).

 

110.  “Absorption, luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4, N. Y. Garces, M. M. Chirila, H. J. Murphy, J. W. Foise, E. A. Thomas, C. Wicks, K. Grencewicz, L. E. Halliburton, and N. C. Giles, Journal of Physics and Chemistry of Solids 64, 1195-1200 (2003).

 

109.  “The Path to P-Type ZnO: Donor and Acceptor Dynamics”, D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles, and L. E. Halliburton, Phys. Stat. Sol. (a) Applied Research 195, pp. 171-177 (2003).

 

108.  “Heavy Cr-doping of ZnSe by Molecular Beam Epitaxy”, B. L. VanMil, A. J. Ptak, L. Bai, Lijun Wang, M. Chirila, N. C. Giles, T. H. Myers, and Larry Wang, Journal of Electronic Materials 31, pp. 770-775 (2002).

 

107.  “Luminescence Associated with Copper in ZnGeP2, Lijun Wang, Lihua Bai, K. T. Stevens, N. Y. Garces, N. C. Giles, S. D. Setzler, P. G. Schunemann, and T. M. Pollak, Journal of Applied Physics 92, pp. 77-81 (2002).

 

106. “Raman studies on oxygen doped GaN grown by molecular beam epitaxy”, D. Papadimitrious, A. J. Ptak, D. Korakakis, N. C. Giles, and T. H. Myers, Materials Research Society Symposium Proceedings Vol. 693, pp. 41-46 (2002).

 

105. “Role of Copper in the Green Luminescence from ZnO Crystals”, N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Applied Physics Letters 81, 622-624 (2002).

 

104.  “Production of Nitrogen Acceptors in ZnO by Thermal Annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, Applied Physics Letters 80, 1334-1336 (2002).

 

103.  “Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy”, A. J. Ptak, Lijun Wang, N. C. Giles, T. H. Myers, L. T. Romano, C. Tian, R. A. Hockett, S. Mitha, and P. Van Lierde, Applied Physics Letters 79, 4524-4526 (2001).

 

102.  “A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy”, A.J. Ptak, T.H. Myers, Lijun Wang, N.C. Giles, M. Moldovan, C.R. Da Cunha, L.A. Hornak, C. Tian, R. A. Hockett, S. Mitha and P. Van Lierde, Materials Research Society Symposium Proceedings Vol. 639, pp. G3.3.1-G3.3.6 (2001).

 

101.  “Controlled Oxygen Doping of GaN using Plasma Assisted Molecular-Beam Epitaxy”, A. J. Ptak, L. J. Holbert, L. Ting, C. H. Swartz, M. Moldovan, N. C. Giles, T. H. Myers, P. Van Lierde, C. Tian, R. A. Hockett, S. Mitha, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Applied Physics Letters 79, 2740-2742 (2001).

 

100.  “The Effect of High-Energy Electrons During the Growth of ZnSe and ZnMgSe by Molecular Beam Epitaxy”, B. L. VanMil, A. J. Ptak, N. C. Giles, T. H. Myers, P. J. Treado, M. P. Nelson, J. M. Ribar, and R. D. Smith, Journal of Electronic Materials 30, 785-788 (2001).

 

99.    “Sharp-Line Luminescence and Absorption in ZnGeP2, C. I. Rablau and N. C. Giles, Journal of Applied Physics 90, 3314-3318 (2001).

 

98.    “Magnesium and Beryllium Doping During rf-Plasma MBE Growth of GaN”, T. H. Myers, A. J. Ptak, Lijun Wang, and N. C. Giles, Proc. of International Workshop on Nitride Semiconductors (IWN2000), Japan (published through Japanese Journal of Appl. Physics), 451-454 (2000).

 

97.    “Infrared Vibrational Spectra from O-H Complexes in CdWO4, M. M. Chirila, N. Y. Garces, H. J. Murphy, C. Wicks, K. Grencewicz, L. E. Halliburton, and N. C. Giles, J. Phys. Chem. Solids 61, 1871-1876 (2000).

 

96.    "Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP2”, K. T. Stevens, N. C. Giles, L. E. Halliburton, S. D. Setzler, P. G. Schunemann, and T. M. Pollak, Materials Research Society, “Infrared Applications of Semiconductors III”, Vol. 607, pp. 379-384 (2000).

 

95.    "Photoluminescence and EPR of Phosphorus Vacancies in ZnGeP2”, M. Moldovan, K. T. Stevens, L. E. Halliburton, P. G. Schunemann, T. M. Pollak, S. D. Setzler, and N. C. Giles, Materials Research Society, “Infrared Applications of Semiconductors III”, Vol. 607, pp. 445-450 (2000).

 

94.    "Broad-Band Photoluminescence from ZnGeP2, M. Moldovan and N. C. Giles, Journal of Applied Physics 87, pp. 7310-7315 (2000).

 

93.    "Photoluminescence study of cadmium tungstate crystals", M. Chirila, K. T. Stevens, H. J. Murphy, and N. C. Giles, Journal of Physics and Chemistry of Solids 61, 675-681 (2000).

 

92.    "Characterization of Defect-Related Optical Absorption in ZnGeP2", S. D. Setzler, P. G. Schunemann, T. M. Pollak, M. C. Ohmer, J. T. Goldstein, F. K. Hopkins, K. T. Stevens, L. E. Halliburton, and N. C. Giles, Journal of Applied Physics 86, pp. 6677-6681 (1999).

 

91.    "Microstructure, Dangling Bonds and Impurities in Activated Carbons", A. Manivannan, M. Chirila, N. C. Giles, and M. S. Seehra, Carbon 37, pp. 1741-1747 (1999).

 

90.    "Optical and EPR Characterization of Point Defects in Bismuth-Doped CdWO4 Crystals", H. J. Murphy, K. T. Stevens, N. Y. Garces, M. Moldovan, N. C. Giles, and L. E. Halliburton, Radiation Effects and Defects in Solids 149, pp. 273-278 (1999).

 

89.    “Large Volume Imaging Arrays for Gamma-Ray Spectroscopy”, T. E. Schlesinger, B. Brunett, H. Yao, J. M. vanSycoc, R. B. James, S. U. Egarievwe, K. Chattopadhyay, X.-Y. Ma, A. Burger, N. Giles, U. El-Hanany, A. Shahar, and A. Tsigelman, J. Electronic Materials 28, 864 (1999).

 

88.    "Absorption and Photoluminescence Spectroscopy of Diffusion-Doped ZnSe:Cr2+", C. I. Rablau, J.-O. Ndap, X. Ma, A. Burger, and N. C. Giles, J. Electronic Materials 28, 678-682 (1999).

 

87.    “Photoluminescence Excitation Study of Nitrogen-Doped Zinc Selenide Epilayers”, M. Moldovan and N. C. Giles, J. Applied Physics 85, 6723-6727 (1999).

 

86.    "Electron Paramagnetic Resonance of a Cation Antisite Defect in ZnGeP2", S. D. Setzler, N. C. Giles, L. E. Halliburton, P. G. Schunemann, and T. M. Pollak, Appl. Phys. Letter 74, 1218-1220 (1999).

 

85.    “Native Defects in the Ternary Chalcopyrites”, N. C. Giles and L. E. Halliburton, Materials Research Society Bulletin, Vol. 23, no. 7, 37-40 (1998).

 

84.    “Hydrogenation of undoped and nitrogen-doped CdTe and ZnSe grown by molecular beam epitaxy,” L. S. Hirsch, S. D. Setzler, A. J. Ptak, N. C. Giles, and T. H. Myers, Materials Research Society Symposium Proceedings Volume 513, 263-268 (1998).

 

83.    "Investigation of Donor-acceptor Pair Luminescence from ZnSe:N Epilayers", M. Moldovan, T. H. Myers, and N. C. Giles, J. Applied Physics 84, 5743-5749 (1998).

 

82.    "Time-Resolved Photoluminescence of ZnSe:N: Role of Fluctuations", I. Kuskovsky, D. Li, G.F. Neumark, M. Moldovan, N.C. Giles, V.N. Bondarev, and P.V. Pikhitsa, J. Crystal Growth 184-185, 525-530 (1998).

 

81.    "PL and EPR Spectroscopy of Point Defects in Detector Grade CdZnTe", C.I. Rablau, S.D. Setzler, L.E. Halliburton, and N.C. Giles, Mater. Res. Society Symp. Proceedings Vol. 487, 71-76 (1998).

 

80.   "Point Defects in CdZnTe: A Correlated Photoluminescence and EPR Study", C.I. Rablau, S.D. Setzler, L.E. Halliburton, N.C. Giles, and F. P. Doty, J. Electronic Materials 27, 813 (1998).

 

79.    "Nitrogen Doping of ZnSe and CdTe Epilayers:  A Comparison of Two rf Sources", M. Moldovan, L.S. Hirsch, A.J. Ptak, C.D. Stinespring, T.H. Myers, and N.C. Giles, J. Electronic Materials 27, 756 (1998).

 

78.    "Photoluminescence of Nitrogen-Doped Zinc Selenide Epilayers", M. Moldovan, S. D. Setzler, Z. Yu, T. H. Myers, L. E. Halliburton, and N. C. Giles, J. Electronic Materials 26, 732 (1997).

 

77.    "Photoluminescence and Electron Paramagnetic Resonance Studies of Nitrogen-Doped ZnSe  Epilayers ", M. Moldovan, S. D. Setzler, Z. Yu, T. H. Myers, L. E. Halliburton, and N. C. Giles, Mater. Res. Society Symp. Proceedings Vol. 442, 555-560 (1997).

 

76.    "The Effect of Hydrogen on the Molecular Beam Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions", S. L. Buczkowski, Z. Yu, M. Richards-Babb, N. C. Giles, L. T. Romano, and T. H. Myers, Mater. Res. Society Symp. Proceedings Vol. 449, 197-202 (1997).

 

75.    "Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy", S. D. Setzler, M. Moldovan, Zhonghai Yu, T. H. Myers, N. C. Giles, and L. E. Halliburton, Applied Physics Letters 70, 2274 (1997).

 

74.    "Electron Paramagnetic Resonance Studies of Point Defects in Zinc Germanium Phosphide (ZnGeP2)," S. D. Setzler, L. E. Halliburton, N. C. Giles, P. G. Schunemann, and T. M. Pollak, Mater. Res. Soc. Symp. Proc. 450, 327-332 (1997).

 

73.    "Compensating Defects in Heavily Nitrogen-Doped Zinc Selenide:  A Photoluminescence Study", M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. Giles, Applied Physics Letters 70, 1724 (1997).

 

72.    "Band-Edge Photoluminescence at Room Temperature from ZnGeP2 and AgGaSe2",  M.C. Petcu, N.C. Giles, P.G. Schunemann, and T.M. Pollak, Physica Status Solidi (b) 198, 881 (1996).

 

71.    "The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy," Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, and M. R. Richards-Babb, Applied Physics Letters 69, 2731 (1996).

 

70.    "Photon-assisted Growth of Nitrogen-Doped CdTe and the Effects of Hydrogen Incorpora-tion During Growth", Z. Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, T. H. Myers, and M. Richards-Babb, J. Electronic Materials 25, 1247 (1996).

 

69.    "Strong Room Temperature Excitonic Resonance in CdTe:I", T. K. Tran, J. W. Tomm, N. C. Giles, B. K. Wagner, A. Parikh, and C. J. Summers, J. Crystal Growth 159, 368 (1996).

 

68.    "Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen", Zhonghai Yu, S. L. Buczkowski, N. C. Giles, and T. H. Myers, Applied Physics Letters 69, 82 (1996).

 

67.    "Photoluminescence and Micro-Raman Studies of As-Grown and High-Temperature-Annealed KTiOPO4", K. T. Stevens, N. C. Giles, and L. E. Halliburton, Appl. Phys. Lett. 68, 897 (1996).

 

66.    "Hydrogenation of undoped and nitrogen-doped CdTe grown by molecular beam epitaxy", Zhonghai Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, and T. H. Myers, Applied Physics Letters 68, 529 (1996).

 

65.    "Electron Paramagnetic Resonance of Ni+ impurities in AgGaSe2", L. E. Halliburton, N. C. Giles, P. G. Schunemann, and T. M. Pollak, Journal of Applied Physics 79, 556 (1996).

 

64.    "Donor-acceptor-pair luminescence involving the iodine A center in CdTe", Jaesun Lee, N.C. Giles, D. Rajavel, and C.J. Summers, J. Appl. Phys. 78, 5669 (1995).

 

63.    "Photoluminescence and Raman Studies of High Quality CdTe:I Epilayers", N.C. Giles, Jaesun Lee, T.K. Tran, and C.J. Summers, Journal of Electronic Materials 24, 1269 (1995).

 

62.    "Low-Temperature Photoluminescence from Bulk CdTe and Cd0.967Zn0.033Te", Jaesun Lee and N.C. Giles, J. of Appl. Phys. 78, 1191 (1995).

 

61.    "Interpretation of near-band-edge photoreflectance spectra from CdTe", Zhonghai Yu, S. G. Hofer, N.C. Giles, T.H. Myers, and C.J. Summers, Physical Review B 51, 13789 (1995).

 

60.    "Selective Excitation of an Associate Donor-Acceptor Pair Complex in Iodine-doped CdTe", Jaesun Lee, N.C. Giles, and C. J. Summers, J. of Appl. Physics 77, 4544 (1995).

 

59.    "A Comparison of Techniques for Nondestructive Composition Measurements in CdZnTe Substrates", S.P. Tobin, J.P. Tower, P.W. Norton, D. Chandler-Horawitz, P.M. Amirtharaj, V.C. Lopes, W.M. Duncan, A.J. Syllaios, C.K. Ard, N.C. Giles, Jaesun Lee, R. Balasubramanian, B. Bollong, T.W. Steiner, M.L.W. Thewalt, D.K. Bowen, and B.K. Tanner, J. Electronic Materials 24, 697 (1995).

 

58.    "Optical Properties of Undoped and Iodine Doped CdTe ", N.C. Giles, Jaesun Lee, T.H. Myers, Zhonghai Yu, R.G. Benz II, B.J. Wagner, and C.J. Summers, J. Electronic Materials 24, 691 (1995).

 

57.    "Photo-induced electron paramagnetic resonance of the phosphorus vacancy in ZnGeP2", N. C. Giles, L. E. Halliburton, P. G. Schunemann, and T. M. Pollak, Applied Physics Letters 66, 1758 (1995).

 

56.    "Optical and Magnetic Resonance Study of Point Defects in Sr0.6Ba0.4Nb2O6", N.C.Giles, J. L. Wolford, G. J. Edwards, and R. Uhrin, J. Appl. Physics 77, 976 (1995).

 

55.    "Optical Quenching of Bound Excitons in CdTe and Cd1-xZnxTe Alloys:  A Technique to Measure Copper Concentration", Jaesun Lee, T.H. Myers, N.C. Giles, B.E. Dean, and C.J. Johnson, J. Appl. Phys. 76, 537 (1994).

 

54.    "Above-Band-Gap Photoluminescence from n-type CdTe:I Grown by Molecular Beam Epitaxy", Jaesun Lee, N.C. Giles, and C.J. Summers, Phys. Rev. B 49, 11459 (1994).

 

53.    "Room Temperature Band-Edge Photoluminescence from Cadmium Telluride", Jaesun Lee, N.C. Giles, D. Rajavel, and C.J. Summers, Phys. Rev. B 49, 1668 (1994).

 

52.    "Photoluminescence from Heteroepitaxial  (211)B CdTe Grown on (211)B GaAs by Molecular Beam Epitaxy", Jeffrey S. Gold, T.H. Myers, N.C. Giles, K.A. Harris, L. M. Mohnkern, and R.W. Yanka, J. Appl. Phys. 74, 6866 (1993).

 

51.    "Photoluminescence of n-Type CdTe:I Grown by Molecular Beam Epitaxy", N.C. Giles, Jaesun Lee, D. Rajavel, and C.J. Summers, J. Appl. Phys. 73, 4541 (1993).

 

50.    "Photoluminescence Spectroscopy of CdTe Grown by Photoassisted MBE", N.C. Giles, K.A. Bowers, R.L. Harper, S. Hwang, and J.F. Schetzina, J. Crystal Growth 101, 67 (1990).

 

49.    "Modulation Doped HgCdTe Quantum Well Structures and Superlattices Grown by Photo-assisted Molecular Beam Epitaxy", J.F. Schetzina, J.W. Han, Y. Lansari, N.C. Giles, Z. Yang, S. Hwang, J.W. Cook, Jr., and N. Otsuka, J. Crystal Growth 101, 23 (1990).

 

48.    "Stimulated Emission at 2.8 mm from Hg-Based Quantum Well  Structures Grown by Photoassisted MBE",  N.C. Giles, Z. Yang, Jeong W. Han, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. Technol A 8, 1206 (1990).

 

47.    "Photoassisted MBE of II-VI Semiconductor Films and Superlattices", N.C. Giles, R.L. Harper, Jr., J.W. Han, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 161, 227 (1990).

 

46.    "Properties of Modulation-Doped HgCdTe Superlattices", S. Hwang, Z. Yang, Y. Lansari, J.W. Han, J.W. Cook, Jr., N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 161, 263 (1990).

 

45.    "P-type Modulation Doped HgCdTe", Jeong W. Han, S. Hwang, Y. Lansari, R.L. Harper, Z. Yang, N.C. Giles, J.W. Cook, Jr., J.F. Schetzina, and S. Sen, Appl. Phys. Lett. 54, 63 (1989).

 

44.    "Arsenic Doped CdTe Epilayers Grown by Photoassisted Molecular Beam Epitaxy", R.L. Harper, S. Hwang, N.C. Giles, J.F. Schetzina, D.L. Dreifus, and T. H. Myers, Appl. Phys. Lett. 54, 170 (1989).

 

43.    "Properties of II-VI Semiconductor Films Grown by Photoassisted Molecular Beam Epitaxy", R.L. Harper, Jr., Jeong W. Han, S. Hwang, Y. Lansari, N.C. Giles, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. Technol. B 7, 244 (1989).

 

42.    "Excited Electronic States in Cd1-xMnxTe-CdTe Superlattices", R.L. Harper, R.N. Bicknell, D.K. Blanks, N.C. Giles, J.F. Schetzina, Y.R. Lee, and A.K. Ramdas, J. Appl. Phys. 65, 624 (1989).

 

41.    "Modulation Doped HgCdTe", Jeong W. Han, S. Hwang, Y. Lansari, R. L. Harper, Z. Yang, N. C. Giles, J. W. Cook, Jr., and J. F. Schetzina, J. Vac. Sci. Technol. A 7, 305 (1989).

 

40.    "Properties of HgCdTe Films and Hg-Based Quantum Well Structures Grown by Photoassisted Molecular-Beam Epitaxy", T.H. Myers, R.W. Yanka, K.A. Harris, A.R. Reisinger, J.Han, S. Hwang, Z. Yang, N.C. Giles, J.W. Cook, Jr. J.F. Schetzina, R.W. Green, and S. McDevitt, J. Vac. Sci. Technol. A 7, 300 (1989).

 

39.    "Stimulated Emission at 2.8 mm from Hg-Based Quantum Well  Structures Grown by  Photoassisted MBE",  N.C. Giles, Jeong W. Han, J.W. Cook, Jr., and J.F. Schetzina, Appl. Phys. Lett. 55, 2026 (1989).

 

38.    "Properties of Doped II-VI Films and Superlattices Grown by Photoassisted MBE", N.C. Giles, R.N. Bicknell, R.L. Harper, S. Hwang, K.A. Harris, and J.F. Schetzina, J. Crystal Growth 86, 348 (1988).

 

37.    "Properties of Substitutionally Doped CdMnTe Films and CdMnTe-CdTe Quantum Well Structures", R.L. Harper, S. Hwang, N.C. Giles, R.N. Bicknell, J.F. Schetzina, E.K.Suh,  D.U. Bartholomew, Y.R. Lee, and A.K. Ramdas, J. Vac. Sci. Technol. B 6, 782 (1988).

 

36.    "Growth and Properties of Doped CdTe Films Grown by Photoassisted MBE", S. Hwang, R.L. Harper, K.A. Harris, N.C. Giles, R.N. Bicknell, J.F. Schetzina, D.L. Dreifus, and R.M. Kolbas, J. Vac. Sci. Technol. B 6, 777 (1988).

 

35.    "The Effects of a High-Temperature Anneal on the Electrical and Optical Properties of Bulk CdTe:In", N.C. Giles, S. Hwang, J.F. Schetzina, S. McDevitt, and C.J. Johnson, J. Appl. Phys. 64, 2656 (1988).

 

34.    "Properties of Substitutionally Doped Cd1-xMnxTe Films and Cd1-xMnxTe-CdTe         Quantum Well Structures", R.L. Harper, S. Hwang, N.C. Giles, R.N. Bicknell, J.F. Schetzina, Y.R. Lee, and A.K. Ramdas, J. Vac. Sci. Technol. A 6, 2627 (1988).

 

33.    "Properties of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy", S. Hwang, R.L. Harper, K.A. Harris, N.C. Giles, R.N. Bicknell, J.W. Cook, Jr., and J.F. Schetzina, J. Vac. Sci. Technol. A 6, 2821 (1988).

 

32.    "Substitutionally Doped II-VI Semiconductor Films and Layered Structures", J.F. Schetzina, R.L. Harper, J. Han, S. Hwang, N.C. Giles, Y. Lansari, and J.W. Cook, Jr., Mater. Res. Soc. Symp. Proc. 102, 97 (1988).

 

31.    "Low Temperature Photoluminescence Study of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy",  N.C. Giles, R.N. Bicknell, and J.F. Schetzina, J. Vac. Sci. Technol. A 5, 3064 (1987).

 

30.    "Controlled Substitutional Doping of CdTe Thin Films Grown by  Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, J.F. Schetzina, and C. Hitzman, J. Vac. Sci. Technol. A 5, 3059 (1987).

 

29.    "Controlled Substitutional Doping of CdTe Films Grown by MBE", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, J. Vac. Sci. Technol. B 5, 701 (1987).

 

28.    "Growth and Properties of In-Doped CdMnTe-CdTe Superlattices", R.N. Bicknell, N.C. Giles,  and J.F. Schetzina, Appl. Phys. Lett. 50, 691 (1987).

 

27.    "Optical Properties of Doped Cd1-xMnxTe", Y. Lansari, N.C. Giles, J.F. Schetzina, P. Becla, and D. Kaiser, Mater. Res. Soc. Symp. Proc. 89, 281 (1987).

 

26.    "Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique", W.P. Allred, A.A. Khan, C.J. Johnson, N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 90, 103 (1987).

 

25.    "Controlled Substitutional Doping of CdTe Thin Films and Cd1-xMnxTe-CdTe Superlattices", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc., 90, 163 (1987).

 

24.    "Low Temperature Photoluminescence Study of Doped CdTe and CdMnTe Films Grown by Photoassisted Molecular Beam Epitaxy", N.C. Giles, R.N. Bicknell, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc., 90, 271 (1987).

 

23.    "Electrical and Optical Properties of P- and As-Doped Cd1-xMnxTe", P. Becla, D. Kaiser, N.C. Giles, Y. Lansari, and J.F. Schetzina, J. Appl. Phys. 62, 1352 (1987).

 

22.    "The Growth and Characterization of InGaAs/GaAsP Strained Layer Superlattices", T. Katsu-yama, N.C. Giles, R.P. Burns, S.M. Bedair, and J.F. Schetzina, J. Appl. Phys. 62, 498 (1987).

 

21.    "Spin Flip Raman Scattering from Cd1-xMnxTe:In Epilayers and Modulation Doped Cd1-xMnxTe:In-CdTe Superlattices Grown by Photoassisted Molecular Beam Epitaxy", E.-K. Suh, D.U. Bartholomew, A.K. Ramdas, R.N. Bicknell, R.L. Harper, N.C. Giles, and J.F. Schetzina, Phys. Rev. B 36, 9358 (1987).

 

20.    "Growth and Characterization of CdTe, MnxCd1-xTe, ZnxCd1-xTe, and CdSeyTe1-y Crystals", K.Y. Lay, N.C. Giles-Taylor, K.J. Bachmann, and J.F. Schetzina, J. Electrochem. Soc. 133, 1049 (1986).

 

19.    "Strain Effects in Cd1-xMnxTe-CdTe Superlattices", D.K. Blanks, R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, A. Petrou, and J. Warnock, J. Vac. Sci. Technol. B 4, 635 (1986).

 

18.    "Strain Effects in Cd1-xMnxTe-CdTe Superlattices", D.K. Blanks, R.N. Bicknell, N.C. Giles-Taylor, J.F. Schetzina, A. Petrou, and J. Warnock, J. Vac. Sci. Technol. A 4, 2120 (1986).

 

17.    "Stimulated Emission from Cd1-xMnxTe and Cd1-xMnxTe-Cd1-yMnyTe Multiple Quantum Well Structures", R.N. Bicknell, N.C. Giles-Taylor, N.G. Anderson, W.D. Laidig, and J.F. Schetzina, J. Vac. Sci. Technol. A 4, 2126 (1986).

 

16.    "Growth of High Mobility N-Type CdTe by Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Appl. Phys. Lett. 49, 1095 (1986).

 

15.    "P-Type CdTe Epilayers Grown by Photoassisted Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles, and J.F. Schetzina, Appl. Phys. Lett. 49, 1735 (1986).

 

14.    "Properties and Applications of CdTe/Sapphire Epilayers Grown by Molecular Beam Epitaxy", T.H. Myers, N.C. Giles-Taylor, R.W. Yanka, R.N. Bicknell, J.W. Cook, Jr., J.F. Schetzina, S.R. Jost, H.S. Cole, and H.H. Woodbury, J. Vac. Sci. Technol. A 3, 71 (1985).

 

13.    "Photoluminescence of CdTe:  A Comparison of Bulk and Epitaxial Material",  N.C. Giles-Taylor, R.N. Bicknell, D.K. Blanks, T.H. Myers, and J.F. Schetzina, J. Vac. Sci. Technol. A 3, 76 (1985).

 

12.    "Properties of Cd1-xMnxTe-CdTe Superlattices Grown by Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, R.W. Yanka, E.L. Buckland, and J.F. Schetzina, J. Vac. Sci. Technol. B 3, 709 (1985).

 

11.    "Properties of  Cd1-xMnxTe-CdTe Quantum Well Structures and Superlattices Grown by MBE", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, R.W. Yanka, E.L. Buckland, and J.F. Schetzina, Mater. Res. Soc. Symp. Proc. 37, 35 (1985).

 

10.    "Stimulated Emission from a Cd1-xMnxTe-CdTe Multilayer Structure", R.N. Bicknell, N.C. Giles-Taylor, N.G. Anderson, W.D. Laidig, and J.F. Schetzina, Appl. Phys. Lett. 46, 238 (1985).

 

 9.     "Photoluminescence of a Cd0.55Mn0.45Te-CdTe Multiple Quantum Well Structure in a Magnetic Field", A. Petrou, J. Warnock, R.N. Bicknell, N.C. Giles-Taylor, and J.F. Schetzina, Appl. Phys. Lett. 46, 692 (1985).

 

 8.     "Dilute Magnetic Semiconductor (Cd1-xMnxTe) Quantum-Well Laser", R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, J.F. Schetzina, N.G. Anderson, and W.D. Laidig, Appl. Phys. Lett. 46, 1122 (1985).

 

 7.     "Photoluminescence of Cd1-xMnxTe-CdTe Multiple Quantum Wells and Superlattices in a Magnetic Field", J. Warnock, A. Petrou, R.N. Bicknell, N.C. Giles-Taylor, D.K. Blanks, and J.F. Schetzina, Phys. Rev. B 32, 8116 (1985).

 

 6.     "Growth of (100) CdTe Films of High Structural Perfection On (100) GaAs Substrates by Molecular Beam Epitaxy", R.N. Bicknell, R.W. Yanka, N.C. Giles, T.J. Magee, C. Leung, H. Kawayoshi, and J.F. Schetzina, Appl. Phys. Lett. 44, 313 (1984).

 

 5.     "Growth of High Quality (100) CdTe Films on (100) GaAs Substrates by Molecular Beam Epitaxy", R.N. Bicknell, N.C. Giles-Taylor, R.W. Yanka,  J.F. Schetzina, T.J. Magee, C. Leung, H. Kawayoshi, and G.R. Woolhouse, J. Vac. Sci. Technol. B 2, 417 (1984).

 

 4.     "Cd1-xMnxTe-CdTe Multilayers Grown by Molecular Beam Epitaxy", R.N. Bicknell, R.W. Yanka, N.C. Giles-Taylor, D.K. Blanks, E.L. Buckland, and J.F. Schetzina, Appl. Phys. Lett. 45, 92 (1984).

 

 3.     "Study of the Electronic Structure of Amorphous Silicon Using Reverse-Recovery Techniques", M. Silver, N.C. Giles, E. Snow, M.P. Shaw, V. Cannella, and D. Adler, Appl. Phys. Lett. 41, 935 (1982).

 

 2.     "What is the Majority Carrier Drift Mobility in a-Si Alloys?", M. Silver, N.C. Giles, and E. Snow, Sol. Energy Mater. 8, 303 (1982).

 

 1.     "Screening of Charge Transfers at Transition-Metal-Adsorbate Interfaces", N.C. Giles and C.M. Varma, Phys. Rev. B 23, 5600 (1981).

 

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